Germanium doping of wider-band-gapCuGaSe2chalcopyrites: Local and electronic structure-Reference-Cited by-同舟云学术

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Germanium doping of wider-band-gapCuGaSe2chalcopyrites: Local and electronic structure

Published:2010-06-24 Issue:24 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Koteski V.,Doka-Yamigno S.,Hofstetter J.,Rusu M.,Mahnke H.-E.,Lux-Steiner M. Ch.,Schedel-Niedrig Th.,Arushanov E.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.245213/fulltext

Reference23 articles.

1. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

2. Electrical and optical characterization of ion-implanted CuGaSe2 single crystals

3. Photoluminescence Properties of Ge-Implanted CuGaSe2 Crystals

4. Practical doping principles

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1. Silver Alloying in Highly Efficient CuGaSe₂ Solar Cells with Different Buffer Layers;Solar RRL;2023-05-04

2. Structural and Optical Characteristics of Boron Doped CuGaSe2 Chalcopyrite;Intelligent Computing Techniques for Smart Energy Systems;2022

3. Predicting copper gallium diselenide and band structure engineering through order-disordered transition;Physical Review Materials;2019-12-24

4. X‐Ray Fluorescence Holography Analysis of Local Structure in CuInSe 2 and CuGaSe 2;physica status solidi (a);2019-02-27

5. Photovoltaic device performance of pure, manganese (Mn2+) doped and irradiated CuInSe2 thin films;New Journal of Chemistry;2018

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