Spectroscopic investigation of the electronic states in narrow coupled GaAs/AlAs quantum wells with indirect band structure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.8319/fulltext
Reference17 articles.
1. Bound and virtual bound states in semiconductor quantum wells
2. Doublet state of resonantly coupled AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
3. Effect of electric fields on excitons in a coupled double-quantum-well structure
4. Transformation of spatially direct to spatially indirect excitons in coupled double quantum wells
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electro–optic properties of InGaAs/GaAs quantum wires with V-shaped profile;Solid-State Electronics;1998-07
2. Damping of optical phonons in Ga_{1-x}Al_{x}As alloys;Physical Review Letters;1991-11
3. Pressure-induced Γ-Xelectron-transfer rates in a (GaAs)15/(AlAs)5superlattice;Physical Review B;1991-10-15
4. Interface Roughness and Confined Vibrations;Light Scattering in Semiconductor Structures and Superlattices;1991
5. Time-Resolved Photoluminescence Determination of XZ -XX.Y Energy Separation and XZ State Lifetimes in AlGaAs/AlAs Type II Multiple Quantum Wells;Condensed Systems of Low Dimensionality;1991
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