Two-hole localization mechanism for electronic bond rupture of surface atoms by laser-induced valence excitation of semiconductors
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.035337/fulltext
Reference38 articles.
1. Semiconductor Surfaces and Interfaces
2. Pulsed laser-induced photochemical decomposition of GaAs(110) studied with time-resolved photoelectron spectroscopy using synchrotron radiation
3. Site-sensitive yield of atomic emission induced by laser irradiation on Si(111)−7×7 surface
4. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy
5. Photoetching of Si(111)-(7 × 7) studied by STM
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