Photoemission study of the formation ofSrF2/GaAs(100) andBaF2/GaAs(100) interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.1750/fulltext
Reference25 articles.
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5. Epitaxial growth of lattice‐matched CaxSr1−xF2on (100) and (110) GaAs substrates
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1. Work function and negative electron affinity of ultrathin barium fluoride films;Surface and Interface Analysis;2020-07
2. Heteroepitaxial deposition of Group IIa fluorides on gallium arsenide;Materials Science and Engineering: B;1997-06
3. MBE growth of fluorides;Microelectronics Journal;1996-07
4. Initial stages of the growth ofSrF2on InP;Physical Review B;1995-11-15
5. Growth and interfacial chemistry of insulating (100) barium fluoride on gallium arsenide;Journal of Applied Physics;1995-03-15
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