Saturation of intersubband transitions inp-type semiconductor quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.12672/fulltext
Reference24 articles.
1. Energy band structure in p-type germanium and silicon
2. Intersubband dipole matrix elements of narrow-gap semiconductor films
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4. Modification of optical properties of GaAs‐Ga1−xAlxAs superlattices due to band mixing
5. Interband optical transitions in GaAs-Ga1−xAlxAs and InAs-GaSb superlattices
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