Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.14786/fulltext
Reference6 articles.
1. Chemical ordering and boundary structure in strained-layer Si-Ge superlattices
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4. Critical test of the structure of the ordered phase in epitaxially grownSixGe1−xfilms
5. Structures of Steps and Appearances of {311} Facets on Si(100) Surfaces
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3. New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons;Advanced Materials Research;2007-10
4. Reassessment of the molecular mechanisms for H2 thermal desorption pathways from Si(1−x)Gex(001)-(2×1) surfaces;The Journal of Chemical Physics;2007-01-28
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