Piezoelectric-field-induced localization of barrier states in {211}-oriented InAs/GaAs superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.12945/fulltext
Reference10 articles.
1. Stark Localization in GaAs-GaAlAs Superlattices under an Electric Field
2. Optical properties of strained-layer superlattices with growth axis along [111]
3. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices
4. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
5. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices
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1. Piezomodulated and photomodulated reflectivity study of strained InxGa1–xAs/GaAs single quantum well;Physics Letters A;2006-02
2. Phonons, Strains, and Pressure in Semiconductors;High Pressure in Semiconductor Physics II;1998
3. Elastic lattice deformation and piezoelectric fields in wurtzite type II–VI semiconductor heterostructures;Solid State Communications;1997-03
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