Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity-Reference-Cited by-同舟云学术

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Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity

Published:2000-03-15 Issue:11 Volume:61 Page:7253-7256
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Shlimak I.,Khondaker S. I.,Pepper M.,Ritchie D. A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.7253/fulltext

Reference24 articles.

1. Screening of the Coulomb interaction in two-dimensional variable-range hopping

2. Two-dimensional hopping conductivity in aδ-dopedGaAs/AlxGa1−xAsheterostructure

3. Effect of carrier-carrier interactions on some transport properties in disordered semiconductors

4. Correlation effects in hopping conduction: Hopping as a multi-electron transition

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1. Hopping charge transport in hydrogenated amorphous silicon–germanium alloy thin films;Journal of Applied Physics;2022-06-14

2. Irradiation-induced metal-insulator transition in monolayer graphene;FlatChem;2019-03

3. Resistivity of the insulating phase approaching the two-dimensional metal-insulator transition: The effect of spin polarization;Physical Review B;2017-01-11

4. Structure and Electron Transport in Irradiated Monolayer Graphene;Future Trends in Microelectronics;2016-09-19

5. Hopping magnetoresistance in ion irradiated monolayer graphene;Physica E: Low-dimensional Systems and Nanostructures;2016-02

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