Electronic structure of the deep boron acceptor in boron-doped6H-SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.1607/fulltext
Reference39 articles.
1. Silicon carbide (SiC)—Recent results in physics and in technology
2. Free-to-bound transition in β-SiC doped with boron
3. Site effect on the impurity levels in4H,6H, and15RSiC
4. Boron-related deep centers in 6H-SiC
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