Theoretical studies of electronic and structural properties of the Si/GaP(110) interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.18167/fulltext
Reference13 articles.
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1. Space charge capacitance study of GaP/Si multilayer structures grown by plasma deposition;Journal of Physics D: Applied Physics;2021-12-30
2. Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory;Physical Review B;2013-09-23
3. Stress relief from reconstructions on Sb/Si(001);Physical Review B;2002-11-11
4. A SEMIEMPIRICAL STUDY OF THE Sb/Si(001) SURFACE;Acta Physica Sinica;2000
5. Semiempirical approach for calculating surface stress: Application toAs/Si(001)2×1;Physical Review B;1999-08-15
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