High-pressure effects in the layered semiconductor germanium selenide
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.16750/fulltext
Reference18 articles.
1. The crystal structure of IV-VI compounds. I. Classification and description
2. A new high-pressure phase of PbTe above 16 GPa
3. Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phase
4. Rigid-layer modes in chalcogenide crystals
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