Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy-Reference-Cited by-同舟云学术

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Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy

Published:2007-06-29 Issue:24 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Romanyuk K.,Mysliveček J.,Cherepanov V.,Sekiguchi T.,Yoshida S.,Itoh K. M.,Voigtländer B.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.241309/fulltext

Reference32 articles.

1. Realization of a Linear Germanium Nanowire p−n Junction

2. One-dimensional metal structures at decorated steps

3. NANOWIRES ON STEPPED METAL SURFACES

4. Nanowires by Step Decoration

5. Linear arrays of CaF2 nanostructures on Si

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1. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures;Applied Surface Science;2019-01

2. Formation and interaction of dislocation-induced and vicinal monatomic steps on a GaAs(001) surface under stress relaxation;Scripta Materialia;2016-03

3. P-doped germanium nanowires with Fano-broadening in Raman spectrum;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2016-02

4. Ag-induced √3 reconstruction on Si(111)/Ge-(5 × 5) and the surfactant behavior of Ag in further growth of Ge;Applied Surface Science;2015-11

5. Surface and Step Conductivities on Si(111) Surfaces;Physical Review Letters;2015-08-03

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