Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.R1770/fulltext
Reference19 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
4. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
5. Critical layer thickness for self-assembled InAs islands on GaAs
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