Phonon frequencies for Si-Ge strained-layer superlattices calculated in a three-dimensional model
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.7033/fulltext
Reference30 articles.
1. STRUCTURAL, COMPOSITIONAL, AND OPTICAL PROPERTIES OF ULTRATHIN Si/Ge SUPERLATTICES
2. Folded acoustic phonons in Si-SixGe1−xsuperlattices
3. Dispersion of folded phonons in superlattices
4. Folded acoustic phonons in Si/GexSi1−xstrained-layer superlattices
5. Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy
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3. Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors;Journal of Applied Physics;2012-05-15
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