Magnetic-field-induced charge localization in a high-mobility semiconductor superlattice-Reference-Cited by-同舟云学术

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Magnetic-field-induced charge localization in a high-mobility semiconductor superlattice

Published:1998-05-15 Issue:20 Volume:57 Page:13094-13098
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Denk Petra,Hartung Martin,Streibl Martin,Wixforth Achim,Campman Kenneth L.,Gossard Arthur C.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.13094/fulltext

Reference17 articles.

1. Superlattice and Negative Differential Conductivity in Semiconductors

2. Remotely-doped graded potential well structures

3. Realization of a quasi‐three‐dimensional modulation‐doped semiconductor structure

4. Size effect in parabolic GaAs/AlxGa1−xAs quantum wells

5. Wide electron gas with periodic density modulation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compensation of charge fluctuations in quantum wells with dual tunneling and photon-assisted escape paths;Journal of Applied Physics;2001-04-15

2. Magnetoresistance of chiral surface states in the integer quantum Hall effect;Physica E: Low-dimensional Systems and Nanostructures;2000-02

3. The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field;Journal of Physics: Condensed Matter;1999-01-01

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