Direct insertion ofSiH3radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.5791/fulltext
Reference38 articles.
1. Hydrogenated Amorphous Silicon
2. Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface
3. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon
4. Sticking and recombination of the SiH3 radical on hydrogenated amorphous silicon: The catalytic effect of diborane
5. Plasma and surface reactions during a-Si:H film growth
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