Ab initiocalculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.13367/fulltext
Reference49 articles.
1. Abinitiopseudopotential study of structural and high-pressure properties of SiC
2. Pressure dependences of band gaps and optical-phonon frequency in cubic SiC
3. Inter-layer interactions and the origin of SiC polytypes
4. Calculated elastic constants and deformation potentials of cubic SiC
5. Structural and electronic properties of cubic, 2H, 4H, and 6HSiC
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