Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.R14001/fulltext
Reference20 articles.
1. Going beyond the mean-field approximations of alloys and alloy superlattices: a few puzzles solved?
2. Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface
3. Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures
4. Dynamics of anti-Stokes photoluminescence in type-IIAlxGa1−xAs−GaInP2heterostructures: The important role of long-lived carriers near the interface
5. Band alignment and photoluminescence up-conversionat the GaAs/(ordered)GaInP2heterojunction
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