Electronic structure of δ-doped quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.4790/fulltext
Reference17 articles.
1. Subband physics for a “realistic” δ-doping layer
2. Spatial localization and diffusion of atomic silicon in delta-doped GaAs
3. Electron energy levels in a δ-doped layer in GaAs
4. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
5. Resonant excitation of a layer of Si donors in GaAs
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1. On the possibility of tuning the energy separation between space-quantized levels in a quantum well;Philosophical Magazine Letters;2013-01
2. The influence of the ionized impurity delta-layer potential in the quantum well on impurity binding energy;Journal of Applied Physics;2011-03-15
3. Scanning tunnelling microscope imaging of nanoscale electron density gradients on the surface of GaAs;Journal of Physics: Condensed Matter;2003-10-13
4. Subband characteristics of Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures;Journal of Applied Physics;2001-09-15
5. The electronic structure and optical properties of intermixed GaAs/AlGaAs double quantum wells;Journal of Applied Physics;1998-09
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