Uniaxially stressed silicon: Fine structure of the exciton and deformation potentials
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.17.4821/fulltext
Reference34 articles.
1. Fine structure of indirect exciton in GaP
2. Valley-Orbit Splitting of Free Excitons? The Absorption Edge of Si
3. Analysis of derivative spectrum of indirect exciton absorption in silicon
4. Direct observation of split-off exciton and phonon structures in absorption spectrum of silicon
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