Oscillatory behavior of the continuum states inInxGa1−xAs/GaAs quantum wells due to capping-barrier layers of finite size
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.13769/fulltext
Reference13 articles.
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1. Photoreflectance and photoluminescence studies of epitaxial InGaAs quantum rods grown with As2 and As4 sources;Journal of Applied Physics;2011-06-15
2. Current-Induced Light Modulation Using Quantum Wells in the Collector of Heterojunction Bipolar Transistors;IEEE Journal of Quantum Electronics;2004-04
3. Spectroscopy of high-energy excitonic states in ultra-thick GaAs quantum wells with a perfect crystal structure;Journal of Luminescence;2003-05
4. Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells;Journal of Applied Physics;2002-10-15
5. Modulation spectroscopy of critical points in excitonic energy structure of thick GaAs quantum wells;Springer Proceedings in Physics;2001
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