Electronic Raman scattering in heavily dopedp-type germanium
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.8071/fulltext
Reference26 articles.
1. Effect of Carrier Concentration on the Raman Frequencies of Si and Ge
2. Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes
3. Electronic Raman scattering and the metal-insulator transition in doped silicon
4. Intraband Raman scattering by free carriers in heavily dopedn−Si
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