Comment on ‘‘Excitation-energy dependence of optically induced ESR ina-Si:H’’
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.7887/fulltext
Reference7 articles.
1. Excitation-energy dependence of optically induced ESR ina-Si:H
2. Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPM
3. Origin of the photo-induced changes in hydrogenated amorphous silicon
4. Structure and Electronic States in Disordered Systems
5. Charged dangling bonds: Key to electronic transport, recombination and metastability in hydrogenated amorphous silicon
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1. Light-induced creation of metastable defects in hydrogenated amorphous silicon studied by computer simulations of constant photocurrent measurements;Physical Review B;1999-02-15
2. Light-induced defects in hydrogenated amorphous silicon studied by the constant-photocurrent method;Physical Review B;1997-04-15
3. Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films;Journal of Applied Physics;1997-04-15
4. Electronic Structure of Band-Tail Electrons in a Si:H;Physical Review Letters;1996-11-25
5. The Future of Amorphous Silicon Photovoltaic Technology;Progress in Photovoltaics: Research and Applications;1995-09
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