Author:
Reynolds D. C.,Bajaj K. K.,Litton C. W.
Publisher
American Physical Society (APS)
Cited by
4 articles.
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1. Magneto‐photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures;Journal of Applied Physics;1995-08
2. Excited Acceptor States in II–VI and III–V Semiconductors;physica status solidi (b);1990-01-01
3. gallium arsenide (GaAs), transition energies of highly excited acceptor states;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
4. gallium arsenide (GaAs), properties of acceptor excited states;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.