Model for nucleation in GaAs homoepitaxy derived from first principles
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.15246/fulltext
Reference17 articles.
1. Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces
2. Nucleation and Growth of Islands on GaAs Surfaces
3. Island Nucleation and Growth on Reconstructed GaAs(001) Surfaces
4. Generalized Gradient Approximation Made Simple
5. Generalized norm-conserving pseudopotentials
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