Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy-Reference-Cited by-同舟云学术

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Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy

Published:1998-07-15 Issue:4 Volume:58 Page:2045-2049
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lienau Ch.,Richter A.,Behme G.,Süptitz M.,Heinrich D.,Elsaesser T.,Ramsteiner M.,Nötzel R.,Ploog K. H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.2045/fulltext

Reference18 articles.

1. Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy

2. Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy

3. Surface Studies by Scanning Tunneling Microscopy

4. Scanning cathodoluminescence microscopy: A unique approach to atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities

5. Optical stethoscopy: Image recording with resolution λ/20

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1. Sidewall Quantum Wires on GaAs (001) Substrates;Physical Review Applied;2019-06-10

2. Acoustic Carrier Transport in GaAs Nanowires;Topics in Applied Physics;2013-09-28

3. State filling dependent luminescence in hybrid tunnel coupled dot–well structures;Nanoscale;2012

4. Experimental Methods;Semiconductor Optics;2012

5. Optical Properties of Excitons in Structures of Reduced Dimensionality;Semiconductor Optics;2012

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