Calculation of properties of the electron-hole liquid in uniaxially stressed Ge and Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.25.7631/fulltext
Reference93 articles.
1. Condensation of excitons in germanium and silicon
2. Electron-Hole Liquids in Semiconductors
3. Electron-hole liquid in many-band systems. II. Ge and Si
4. Electron-hole liquid in many-band systems. I. Ge and Si under large uniaxial strain
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron-hole liquid in germanium under high〈111〉stress;Physical Review B;1989-08-15
2. Properties of electron-hole liquid in highly stressed silicon;Physical Review B;1985-10-15
3. Strain-confined electron-hole liquid in Ge: Density variations and compressibility;Physical Review B;1982-07-15
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