Correlation of InGaP(001) surface structure during growth and bulk ordering
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.8185/fulltext
Reference35 articles.
1. High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy
2. 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers
3. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
4. Surface characterization of ordered (GaIn)P
5. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
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