Occupied and unoccupied surface states on the single-domain Si(100):Sb-2×1 surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.10983/fulltext
Reference17 articles.
1. The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studies
2. Electronic and atomic structure of arsenic terminated Si(100)
3. Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals
4. Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies
5. Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission
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3. The effect of controlled ion bombardment on the electronic structure of the Si(001) surface;Applied Surface Science;2008-01
4. Effect of ambient pressure and nickel contamination on the dimer-dangling-bond surface state of Si(001)2×1;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-07
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