Spin-dependent multiplet average energies for 3dNimpurities in tetrahedral semiconductors and a comparison with spin-polarized mean-field calculations-Reference-Cited by-同舟云学术

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Spin-dependent multiplet average energies for 3dNimpurities in tetrahedral semiconductors and a comparison with spin-polarized mean-field calculations

Published:1993-11-15 Issue:20 Volume:48 Page:15002-15015
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Dreyhsig J.,Gumlich H.-E.,Allen J. W.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.15002/fulltext

Reference71 articles.

1. Diluted magnetic semiconductors

2. Electronic Structure of 3d Transition-Atom Impurities in Semiconductors

3. Many-electron effects for interstitial transition-metal impurities in silicon

4. Level positions of interstitial transition-metal impurities in silicon

5. Electronic states of a substitutional chromium impurity in GaAs

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1. The Interaction of Hydrogen with Deep Level Defects in Silicon;Solid State Phenomena;1999-10

2. Photoluminescence of Co-Doped ZnCdSe and ZnSSe Alloys;Acta Physica Polonica A;1997-11

3. Band bending within inhomogeneously doped semiconductors with multilevel impurities. II. Examples;Physical Review B;1996-05-15

4. Band bending within inhomogeneously doped semiconductors with multilevel impurities. I. Theory;Physical Review B;1996-05-15

5. Temperature variation of the luminescence spectra in crystals;Semiconductor Science and Technology;1996-01-01

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