Polar semiconductor ZnO under inplane tensile strain
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.045213/fulltext
Reference33 articles.
1. Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors
2. First-Principles Study of the Diffusion of Hydrogen in ZnO
3. Ab initiostudy of piezoelectricity and spontaneous polarization in ZnO
4. First-principles study of strain-electronic interplay in ZnO: Stress and temperature dependence of the piezoelectric constants
5. Large electromechanical response in ZnO and its microscopic origin
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