Schottky contacts on a highly doped organic semiconductor-Reference-Cited by-同舟云学术

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Schottky contacts on a highly doped organic semiconductor

Published:1995-06-15 Issue:23 Volume:51 Page:17251-17254
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lous E.J.,Blom P.W.M.,Molenkamp L.W.,Leeuw D.M. de

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.17251/fulltext

Reference3 articles.

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates;Journal of Electronic Materials;2024-03-05

2. Self‐Doping of the Transport Layers Decreases the Bimolecular Recombination by Reducing Static Disorder;Solar RRL;2023-08-06

3. Unified Mobility Model for Diffusion-Limited Current in Organic Diodes Based on Fermi-Dirac Statistics;Physical Review Applied;2021-09-21

4. Doped Organic Transistors;Chemical Reviews;2016-10-04

5. Unintentional Bulk Doping of Polymer-Fullerene Blends from a Thin Interfacial Layer of MoO3;Advanced Energy Materials;2016-06-03

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