Concentration-fluctuation model of a doped semiconductor in the nonmetallic regime. II. Excitation spectrum
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.3456/fulltext
Reference6 articles.
1. Concentration-fluctuation model of a doped semiconductor in the nonmetallic regime: Pseudocluster investigation
2. Single-particle energy levels in doped semiconductors at densities below the metal-nonmetal transition
3. Formations of D- Complexes and D- Band in Germanium
4. D- state in silicon
5. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Concentration-Fluctuation Model of a Doped Semiconductor in the Nonmetallic Regime. III. Coulomb Gap;Physica Scripta;1987-04-01
2. Energy states of non-equilibrium electron-hole pairs in moderately doped semiconductors: Phase transition in the bound exciton system;Solid State Communications;1985-09
3. Correlated shallow impurity bands in doped semiconductors;Physical Review B;1985-06-15
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