Temperature dependence of photoluminescence bands inZn1−xCdxSe/ZnSequantum wells with planar CdSe islands-Reference-Cited by-同舟云学术

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Temperature dependence of photoluminescence bands inZn1−xCdxSe/ZnSequantum wells with planar CdSe islands

Published:2004-02-18 Issue:8 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Klochikhin A.,Reznitsky A.,Don B. Dal,Priller H.,Kalt H.,Klingshirn C.,Permogorov S.,Ivanov S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.085308/fulltext

Reference61 articles.

1. Effect of disorder on the optical spectra of wide-gap II–VI semiconductor solid solutions

2. Luminescence spectra and kinetics of disordered solid solutions

3. Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots

4. Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures

5. Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSe

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