Model based on trap-assisted tunneling for two-level current fluctuations in submicrometer metal–silicon-dioxide–silicon diodes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.9836/fulltext
Reference20 articles.
1. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
2. 1/fand random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
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4. Low frequency noise in junction field effect transistors
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