Strain-induced interfacial hole localization in self-assembled quantum dots: CompressiveInAs∕GaAsversus tensileInAs∕InSb
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.235316/fulltext
Reference26 articles.
1. Comparison of two methods for describing the strain profiles in quantum dots
2. Prediction of a strain-induced conduction-band minimum in embedded quantum dots
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