Optical band gap of the filled tetrahedral semiconductor LiZnN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.4511/fulltext
Reference14 articles.
1. Predicted Modifications in the Direct and Indirect Gaps of Tetrahedral Semiconductors
2. Electronic structure of filled tetrahedral semiconductors
3. Optical band gap of the filled tetrahedral semiconductor LiZnP
4. Electronic structure of LiZnN: Interstitial insertion rule
5. Die ternären Nitride LiMgN und LiZnN. 16. Mitteilung über Metallamide und Metallnitride
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