Electronic structure of a Si δ-doped layer in a GaAs/AlxGa1−xAs/GaAs quantum barrier-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electronic structure of a Si δ-doped layer in a GaAs/AlxGa1−xAs/GaAs quantum barrier

Published:1996-09-15 Issue:11 Volume:54 Page:7996-8004
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Shi J. M.,Koenraad P. M.,van de Stadt A. F. W.,Peeters F. M.,Devreese J. T.,Wolter J. H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.7996/fulltext

Reference40 articles.

1. Electronic properties of two-dimensional systems

2. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method

3. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

4. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Josephson Transport through a Hubbard Impurity Center;Physical Review Letters;2003-06-04

2. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;2003-05

3. Origin of current instability in GaAs/AlGaAs heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2000-12

4. DX centers in GaAs/Si-δ/AlAs heterostructure;Applied Physics Letters;1999-04-05

5. Photo-induced electron trapping in indirect bandgap at low temperature;Journal of Physics: Condensed Matter;1999-01-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP