Magnetic oxide formation at Al2O3/Co84Fe16interface in magnetic tunnel junction-Reference-Cited by-同舟云学术

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Magnetic oxide formation at Al2O3/Co84Fe16interface in magnetic tunnel junction

Published:2011-05-31 Issue:17 Volume:83 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Rho K.-J.,Lee J.-S.,Lee K.-B.,Park J.-H.,Kim J.-Y.,Park Y. J.,Kim K. J.,Joo S. J.,Rhie K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.172408/fulltext

Reference26 articles.

1. Magnetoelectronics

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures

4. Magnetic tunnel junction performance versus barrier thickness: NiFe/AlOx/NiFe junctions fabricated from a wedged Al layer

5. Characterization of an AlO$_{\rm x}$ Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy Technique

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Manipulating NiFe/AlOx interfacial chemistry for the spin-polarized electrons transport;Applied Surface Science;2013-10

2. Effect of oxidizing the ferromagnetic electrode in magnetic tunnel junctions on tunneling magnetoresistance;Applied Physics Letters;2012-04-23

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