Atomic structure of the Sb-terminated Si(111) surface: A photoelectron diffraction study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.205326/fulltext
Reference24 articles.
1. The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111)
2. Influence of surfactants in Ge and Si epitaxy on Si(001)
3. Initial stage of Ag epitaxial growth on Sb-terminated Si(111) surface
4. Epitaxial growth of bcc Co films on Sb-passivated GaAs(110) substrates
5. Floating Stacking Fault during Homoepitaxial Growth of Ag(111)
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