Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.205327/fulltext
Reference11 articles.
1. Quantum Mechanical Repulsion of Exciton Levels in a Disordered Quantum Well
2. Statistical analysis of near-field photoluminescence spectra of single ultrathin layers of CdSe/ZnSe
3. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
4. Excitons, phonons, and interfaces in GaAs/AlAs quantum-well structures
5. Modification of GaAs/AlGaAs growth‐interrupted interfaces through changes in ambient conditions during growth
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