Comparative study of band-structure calculations for type-II InAs/InxGa1−xSb strained-layer superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.10345/fulltext
Reference33 articles.
1. Long‐wavelength infrared detectors based on strained InAs–Ga1−xInxSb type‐II superlattices
2. Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices
3. Effects of interface stoichiometry on the structural and electronic properties of Ga1−xInxSb/InAs superlattices
4. Deep levels in type-II InAs/GaSb superlattices
5. Deep-shallow transitions and loss of amphoterism in type-II superlattices
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