Detection of arsenic dopant atoms in a silicon crystal using a spherical aberration corrected scanning transmission electron microscope-Reference-Cited by-同舟云学术

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Detection of arsenic dopant atoms in a silicon crystal using a spherical aberration corrected scanning transmission electron microscope

Published:2010-01-11 Issue:3 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Oshima Y.,Hashimoto Y.,Tanishiro Y.,Takayanagi K.,Sawada H.,Kaneyama T.,Kondo Y.,Hashikawa N.,Asayama K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.035317/fulltext

Reference26 articles.

1. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

2. Fundamental limitations in microelectronics—I. MOS technology

3. Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics

4. Dopant mapping for the nanotechnology age

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1. What is Scanning Transmission Electron Microscopy (STEM)?;Electron Nano-imaging;2024

2. From Point Defects to Defect Complexes;The Materials Research Society Series;2023-10-26

3. Resolution of Virtual Depth Sectioning from Four-Dimensional Scanning Transmission Electron Microscopy;Microscopy and Microanalysis;2023-07-12

4. Segregation mechanism of arsenic dopants at grain boundaries in silicon;Science and Technology of Advanced Materials: Methods;2021-01-01

5. Local Atomic Structure Analysis of the Dopants Using Photoelectron Holography Using L1 Regularization;Nihon Kessho Gakkaishi;2020-02-29

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