Influence of surface step density on reflection high-energy-electron diffraction specular intensity during epitaxial growth
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.9312/fulltext
Reference14 articles.
1. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
2. Comments on “RED intensity oscillations during MBE of GaAs”
3. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
4. Be Doping Effect on Growth Kinetics of GaAs Grown by MBE
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