Intraband optical absorption in semiconductor superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.10214/fulltext
Reference17 articles.
1. Electric field effects in excitonic absorption for high‐quality InGaAs/InAlAs multiple‐quantum‐well structures
2. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
3. Observation of Stark shifts in quantum well intersubband transitions
4. Fast relaxing absorptive nonlinear refraction in superlattices
5. Intersubband relaxation in GaAs-AlxGa1−xAs quantum well structures observed directly by an infrared bleaching technique
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1. Energy Band and Absorption Coefficient of Quantum Dots in a Well Structure;Acta Physica Polonica A;2012-07
2. MODIFICATION OF OPTICAL TRANSITION PROBABILITY IN SEMICONDUCTOR SUPERLATTICES: EFFECTS OF STRUCTURAL DEFECT AND LAYER THICKNESS;International Journal of Modern Physics B;2011-12-30
3. Intersubband absorption modulation in coupled double quantum wells by external bias;Semiconductor Science and Technology;2009-03-17
4. Intersubband optical absorption in quantum dots-in-a-well heterostructures;Journal of Applied Physics;2005-09
5. Device simulation for GaAs∕AlGaAs superlattice infrared photodetector with a single current blocking layer;Journal of Applied Physics;2005-03-15
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