Temperature enhancement of the photorefractive effect in GaAs due to the metastable state of theEL2 defect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.16973/fulltext
Reference31 articles.
1. Photorefractive measurements on electron-irradiated semi-insulating GaAs
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3. Temperature dependence of the photorefractive effect in InP:Fe: role of multiple defects
4. Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium telluride
5. Deep level photodiffractive spectroscopy of semiconductors
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1. High optical power dependence of the EL2 recovery in GaAs;Optics Communications;2006-02
2. Evaluation of photoelectric processes in photorefractive crystals via the exposure characteristics of light diffraction;Journal of Physics: Condensed Matter;2004-12-11
3. Direct determination of EL2 thermal recovery rate at 300 K;Optics Communications;2001-10
4. Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure;Applied Physics Letters;2000-07-31
5. Optical nonlinearities at transient quenching of EL2 defect at room temperature;Optics Communications;1999-10
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