Emergence ofp(2×2)on highly dopedn-type Si(100) surfaces: A scanning tunneling microscopy and spectroscopy study
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.245319/fulltext
Reference35 articles.
1. Scanning tunneling microscopy of Si(001)
2. Direct observation of an increase in buckled dimers on Si(001) at low temperature
3. Theoretical study of the Si(100) surface reconstruction
4. Low-temperature scanning-tunneling-microscopy observations of the Si(001) surface with a low surface-defect density
5. Reinterpretation of the scanning tunneling microscopy images ofSi(100)−(2×1)dimers
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