Photovoltaic effect of 10.6-μm radiation on hot carriers in siliconP+-Njunctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.4517/fulltext
Reference18 articles.
1. Photovoltaic potential induced by 10 mu m laser radiation in Si photodiodes
2. Room-temperature resonant multiphotonic optical pumping induced by 10.6-μm laser radiation in reverse-biasedn+/p-type Si junctions
3. A powerful transversely excited multigas laser system
4. Peaking capacitor in an incomplete corona surface discharge preionized TEA CO/sub 2/ laser
5. Hot electrons and phonons under high intensity photoexcitation of semiconductors
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1. GaAs/AlGaAs heterojunction as a fast detector of infrared laser pulses;SPIE Proceedings;2008-09-10
2. Laser-induced hot carrier photovoltaic effects in semiconductor junctions;Progress in Quantum Electronics;2003-01
3. Far-infrared laser-induced hot-carrier impact ionization photovoltaic effect in silicon junctions: Lattice temperature dependence;Journal of Applied Physics;2002-11
4. Experimental study of the hot-carrier impact ionization photovoltaic effect in pulsed-CO2-laser-excited silicon junctions;Semiconductor Science and Technology;2001-05-03
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