Role of excess As in low-temperature-grown GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.4617/fulltext
Reference14 articles.
1. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
2. Picosecond GaAs‐based photoconductive optoelectronic detectors
3. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
4. Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect
5. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
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