Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82)-Reference-Cited by-同舟云学术

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Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82)

Published:1987-02-15 Issue:5 Volume:35 Page:2375-2384
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Xu F.,Joyce J. J.,Ruckman M. W.,Chen H. -W.,Boscherini F.,Hill D. M.,Chambers S. A.,Weaver J. H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.2375/fulltext

Reference33 articles.

1. The structure and properties of metal-semiconductor interfaces

2. Critical development stages for the reactive Cr-GaAs(110) interface

3. Reaction at a refractory metal/semiconductor interface: V/GaAs(110)

4. Photoemission study of the development of the Ti/GaAs(110) interface

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